REFLECTIVE SWITCH
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TT electronics OPTEK Technology has developed a long distance infrared switch that has a reflective distance of >1 in., depending on circuitry. The OPB732 series switch configuration includes an infrared LED and phototransistor, and uses an opaque housing to reduce the sensor's ambient light sensitivity.
The switch is suitable for non-contact reflective object sensing
circuits in equipment security, machine safety, assembly line and
machine automation, as well as door and end-of-travel sensing
applications.
When infrared light strikes the phototransistor, it becomes forward biased and is considered to be in the "on" state, providing an IC(ON) current proportional to the light striking the phototransistor. When the infrared light from the LED is not reflected to the phototransistor, the device turns "off," minimizing the IC(ON) current.
The LED features an 850 nm wavelength and a power dissipation of 100 mW. Maximum forward current is 50 mA and maximum forward voltage is 1.8 V (If = 20 mA). Reverse dc voltage is 3 V, with reverse current of 100 √ǬµA (Vr = 2.0 V). Electrical performance of the output phototransistor is characterized at collector-emitter voltages of 30 V, collector dc current of 50 mA, and power dissipation of 100 mW. Operating temperature range for the long distance reflective switch is -40° to 85°C.
The series assembly is offered with either PC board through hole pins or 24 in., 26 AWG wires. The phototransistor can be configured as a common collector or common emitter device.
optekinc.com
When infrared light strikes the phototransistor, it becomes forward biased and is considered to be in the "on" state, providing an IC(ON) current proportional to the light striking the phototransistor. When the infrared light from the LED is not reflected to the phototransistor, the device turns "off," minimizing the IC(ON) current.
The LED features an 850 nm wavelength and a power dissipation of 100 mW. Maximum forward current is 50 mA and maximum forward voltage is 1.8 V (If = 20 mA). Reverse dc voltage is 3 V, with reverse current of 100 √ǬµA (Vr = 2.0 V). Electrical performance of the output phototransistor is characterized at collector-emitter voltages of 30 V, collector dc current of 50 mA, and power dissipation of 100 mW. Operating temperature range for the long distance reflective switch is -40° to 85°C.
The series assembly is offered with either PC board through hole pins or 24 in., 26 AWG wires. The phototransistor can be configured as a common collector or common emitter device.
optekinc.com
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